100-V Class Two-step-oxide Field-Plate Trench MOSFET to Achieve Optimum RESURF Effect and Ultralow On-resistance
Field-plate engineering for high breakdown voltage β-Ga2O3 nanolayer field-effect transistors - RSC Advances (RSC Publishing)
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Field Plate
Field-plate engineering for high breakdown voltage β-Ga 2 O 3 nanolayer field-effect transistors - RSC Advances (RSC Publishing) DOI:10.1039/C9RA01163C
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GaN HEMT structure with a gate field plate. The source to gate length L... | Download Scientific Diagram
GaN-based HEMT improvement using advanced structures
Original Field Plate to Decrease the Maximum Electric Field Peak for High-Voltage Diamond Schottky Diode
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Figure 1 | The Investigation of Field Plate Design in 500 V High Voltage NLDMOS
Increasing GaN Schottky diode breakdown voltage with recessed double-field plate anode
Analytical model for an extended field plate effect on trench LDMOS with high-k permittivity | Semantic Scholar
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Process Optimization of Trench Field Plate Power MOSFETs with Sequential Phosphorus-Doped Silicon
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Field-plated AlGaN/GaN HEMTs: (a) integrated field plate; (b) separated... | Download Scientific Diagram
Researchers design HEMTs with increased breakdown voltage at high temps – Agnitron
Field Plate | Diablo 2 Wiki | Chest Armor Stats & Modifiers
